Ultra-Steep-Slope P-Type Threshold Switch Field-Effect Transistors

Jiayang Hu

doi:https://doi.org/10.7567/SSDM.2023.A-7-04

講演情報

Oral Presentation

08: Low Dimensional Devices and Materials

[A-7] Device Application III: Low Dimensional Devices and Materials

2023年9月8日(金) 13:30 〜 14:45 Room A (131+132, Bldg. 1)

Session Chairs: Shengnan Wang (NTT Basic Research Laboratories), Yusuke Hoshi (Tokyo City Univ.)

14:30 〜 14:45

[A-7-04] Ultra-Steep-Slope P-Type Threshold Switch Field-Effect Transistors

^○Jiayang Hu¹, Hanxi Li¹, Yishu Zhang¹, Yang Xu¹, Bin Yu¹ (1. Zhejiang Univ. (China))

https://doi.org/10.7567/SSDM.2023.A-7-04

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講演情報

[A-7] Device Application III: Low Dimensional Devices and Materials

[A-7-04] Ultra-Steep-Slope P-Type Threshold Switch Field-Effect Transistors

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