[E-4] 3D NAND

[E-4-03] The Effect of Crystallinity of Channel Silicon Formed by Two Different Metal Induced Lateral Crystallization (MILC) on Cell Current Distribution in 3D Flash Memory

^○Haruki Matsuo¹, Hiroki Yamashita¹, Yusuke Shimada¹, Noritaka Ishihara¹, Satoshi Seto¹, Sho Morita¹, Masafumi Ukishima¹, Kazuya Uejima¹, Yusuke Arayashiki¹, Suzuka Kajiwara¹, Akiyuki Murayama¹, Katsuya Nishiyama¹, Kikuko Suhimae¹, Shinji Mori¹, Yuta Saito¹, Takeshi Shundo¹, Yurika Kanno¹, Hiroyuki Kamiya², Yasuhiro Uchiyama¹, Fumiki Aisou¹, Katsuyuki Sekine¹, Norio Ohtani¹ (1. Kioxia Corp. (Japan), 2. Western Digital Corp. (United States of America))

https://doi.org/10.7567/SSDM.2023.E-4-03