Role of Weakly-bonded and Excess Oxygen in a-In2O3 Thin-Film Transistors

Jiayi Wang

doi:https://doi.org/10.7567/SSDM.2023.E-5-04

Presentation information

Oral Presentation

10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[E-5] Oxide semiconductor TFTs and technology

Fri. Sep 8, 2023 9:00 AM - 10:15 AM Room E (223, Bldg. 2)

Session Chairs: Juan Paolo Bermundo (NAIST), Jun Koyama (Semiconductor Energy Lab.)

9:45 AM - 10:00 AM

[E-5-04] Role of Weakly-bonded and Excess Oxygen in a-In2O3 Thin-Film Transistors

^○Jiayi Wang¹, Kuo Zhang^1,2, Yuxuan Li^1,2, Nannan You¹, Yang Xu¹, Ling Li^1,2, Shengkai Wang^1,2 (1. Inst. of Microelectron. of CAS (China), 2. Univ. of CAS (China))

https://doi.org/10.7567/SSDM.2023.E-5-04

Abstract password authentication.
PA password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

Presentation information

[E-5] Oxide semiconductor TFTs and technology

[E-5-04] Role of Weakly-bonded and Excess Oxygen in a-In2O3 Thin-Film Transistors

Password