Role of Weakly-bonded and Excess Oxygen in a-In2O3 Thin-Film Transistors

Jiayi Wang

doi:https://doi.org/10.7567/SSDM.2023.E-5-04

講演情報

Oral Presentation

10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[E-5] Oxide semiconductor TFTs and technology

2023年9月8日(金) 09:00 〜 10:15 Room E (223, Bldg. 2)

Session Chairs: Juan Paolo Bermundo (NAIST), Jun Koyama (Semiconductor Energy Lab.)

09:45 〜 10:00

[E-5-04] Role of Weakly-bonded and Excess Oxygen in a-In2O3 Thin-Film Transistors

^○Jiayi Wang¹, Kuo Zhang^1,2, Yuxuan Li^1,2, Nannan You¹, Yang Xu¹, Ling Li^1,2, Shengkai Wang^1,2 (1. Inst. of Microelectron. of CAS (China), 2. Univ. of CAS (China))

https://doi.org/10.7567/SSDM.2023.E-5-04

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講演情報

[E-5] Oxide semiconductor TFTs and technology

[E-5-04] Role of Weakly-bonded and Excess Oxygen in a-In2O3 Thin-Film Transistors

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