The Frequency Response Properties of Interface Traps at the HfO <sub>2</sub>/Si Interface Using an Ultrafast DLTS Method

Luping Wang

doi:https://doi.org/10.7567/SSDM.2023.F-1-04

Presentation information

Oral Presentation

01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[F-1] Modeling, Simulation and Characterization

Wed. Sep 6, 2023 2:00 PM - 3:45 PM Room F (224, Bldg. 2)

Session Chairs: Satofumi Souma (Kobe Univ.), Hidetoshi Oishi (Sony Semiconductor Solutions Corp.)

2:45 PM - 3:00 PM

[F-1-04] The Frequency Response Properties of Interface Traps at the HfO ₂/Si Interface Using an Ultrafast DLTS Method

^○Luping Wang¹, Junkang Li¹, Rui Zhang¹ (1. Zhejiang Univ. (China))

https://doi.org/10.7567/SSDM.2023.F-1-04

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Presentation information

[F-1] Modeling, Simulation and Characterization

[F-1-04] The Frequency Response Properties of Interface Traps at the HfO 2/Si Interface Using an Ultrafast DLTS Method

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[F-1-04] The Frequency Response Properties of Interface Traps at the HfO ₂/Si Interface Using an Ultrafast DLTS Method