First Demonstration of SiGe/Si Super-Lattice Ferroelectric HfZrO <sub>2</sub> Multibit FinFET for Nonvolatile Memory

Tsai- Jung Lin

doi:https://doi.org/10.7567/SSDM.2023.F-3-01

09:00 〜 09:15

[F-3-01] First Demonstration of SiGe/Si Super-Lattice Ferroelectric HfZrO ₂ Multibit FinFET for Nonvolatile Memory

^○Tsai- Jung Lin¹, Yi-Ju Yao¹, Ting-Yu Tseng², Ching-Ru Yang², Heng-Jia Chang², Guang-Li Luo³, Fu-Ju Hou³, Yung-Chun Wu² (1. College of Semiconductor Research, National Tsing Hua University (Taiwan), 2. Department of Engineering and System Science, National Tsing Hua University (Taiwan), 3. Taiwan Semiconductor Research Institute (Taiwan))

https://doi.org/10.7567/SSDM.2023.F-3-01

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講演情報

[F-3] Ferroelectric Devices

[F-3-01] First Demonstration of SiGe/Si Super-Lattice Ferroelectric HfZrO ₂ Multibit FinFET for Nonvolatile Memory

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講演情報

[F-3] Ferroelectric Devices

[F-3-01] First Demonstration of SiGe/Si Super-Lattice Ferroelectric HfZrO 2 Multibit FinFET for Nonvolatile Memory

パスワード

[F-3-01] First Demonstration of SiGe/Si Super-Lattice Ferroelectric HfZrO ₂ Multibit FinFET for Nonvolatile Memory