Reliability Improvement of MFM Capacitors by Ozone Treatment on Bottom TiN Electrode

Haoji Qian

doi:https://doi.org/10.7567/SSDM.2023.F-3-02

講演情報

Oral Presentation

01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[F-3] Ferroelectric Devices

2023年9月7日(木) 09:00 〜 10:00 Room F (224, Bldg. 2)

Session Chairs: Pin Su (NYCU), Shibun Tsuda (Renesas Electronics Corp.)

09:15 〜 09:30

[F-3-02] Reliability Improvement of MFM Capacitors by Ozone Treatment on Bottom TiN Electrode

^○Haoji Qian¹, Rongzong Shen¹, Jiajia Chen¹, Gaobo Lin¹, Minglei Ma², Jiacheng Xu¹, Chengji Jin¹, Yan Liu², Xiao Yu¹, Genquan Han² (1. Zhejiang Lab. (China), 2. Xidian University (China))

https://doi.org/10.7567/SSDM.2023.F-3-02

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講演情報

[F-3] Ferroelectric Devices

[F-3-02] Reliability Improvement of MFM Capacitors by Ozone Treatment on Bottom TiN Electrode

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