Epi Source/Drain Damage Mitigation with Inner Spacer and Buffer Optimization in Stacked Nanosheet Gate-All-Around Transistors

Curtis S Durfee

doi:https://doi.org/10.7567/SSDM.2023.F-7-02

14:00 〜 14:15

[F-7-02] Epi Source/Drain Damage Mitigation with Inner Spacer and Buffer Optimization in Stacked Nanosheet Gate-All-Around Transistors

Curtis S Durfee¹, Ivo Otto², ^○Subhadeep Kal², Shanti Pancharatnam¹, Matthew Flaugh², Toshiki Kanaki², Matthew Rednor², Huimei Zhou¹, Liqiao Qin¹, Juntao Li¹, Luciana Meli¹, Nicolas Loubet¹, Peter Biolsi², Nelson Felix¹ (1. IBM (United States of America), 2. TEL (United States of America))

https://doi.org/10.7567/SSDM.2023.F-7-02

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講演情報

[F-7] Advanced CMOS: Device Technology 1

[F-7-02] Epi Source/Drain Damage Mitigation with Inner Spacer and Buffer Optimization in Stacked Nanosheet Gate-All-Around Transistors

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