The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

11:15 AM - 11:30 AM

[J-4-02] Total Ionizing Dose Effect by Gamma-ray Irradiation and Recovery Phenomenon by Applying High Gate Bias to Commercial SiC Power MOSFETs

○Masatoshi Mizushima1, Kazutoshi Kobayashi1, Jun Furuta1 (1. Kyoto Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2023.J-4-02

This paper reports the recovery effect of VGS application on I-V characteristics of Si and SiC power MOSFETs degraded by the Total Ionizing Dose (TID) Effect using Co-60 Gamma-ray source. An SiC planar MOSFET showed the lowest degradation by Gamma-ray irradiation of 118 krad, with a decrease in Vth of about 0.4 V. The two types of SiC trench MOSFETs showed different TID responses and recoveries by VGS application, which is assumed to be by the difference in oxide thickness.