Understanding Memory Window of FeFETs under Coexistence of Charge Trapping and Ferroelectric Polarization: Violation of Linear Superposition

Kasidit Toprasertpong

doi:https://doi.org/10.7567/SSDM.2023.K-1-02

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Oral Presentation

02: Advanced and Emerging Memories / New Applications

[K-1] Ferroelectric Devices

Wed. Sep 6, 2023 2:00 PM - 3:30 PM Room K (234, Bldg. 2)

Session Chairs: Halid Mulaosmanovic (GlobalFoundries., Germany), E Ray Hsieh (National Central Univ.)

2:30 PM - 2:45 PM

[K-1-02] Understanding Memory Window of FeFETs under Coexistence of Charge Trapping and Ferroelectric Polarization: Violation of Linear Superposition

^○Kasidit Toprasertpong^1,2, Mitsuru Takenaka¹, Shinichi Takagi¹ (1. Univ. of Tokyo (Japan), 2. Stanford U. (United States of America))

https://doi.org/10.7567/SSDM.2023.K-1-02

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Presentation information

[K-1] Ferroelectric Devices

[K-1-02] Understanding Memory Window of FeFETs under Coexistence of Charge Trapping and Ferroelectric Polarization: Violation of Linear Superposition

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