Recovery of Cycling-Induced Degradation of Interfacial SiO <sub>2</sub> in HfO <sub>2</sub>-FeFET and its Impact on Retention Characteristics

Viktoria Schlykow

doi:https://doi.org/10.7567/SSDM.2023.K-1-03

Presentation information

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[K-1] Ferroelectric Devices

Wed. Sep 6, 2023 2:00 PM - 3:30 PM Room K (234, Bldg. 2)

Session Chairs: Halid Mulaosmanovic (GlobalFoundries., Germany), E Ray Hsieh (National Central Univ.)

2:45 PM - 3:00 PM

[K-1-03] Recovery of Cycling-Induced Degradation of Interfacial SiO ₂ in HfO ₂-FeFET and its Impact on Retention Characteristics

^○Viktoria Schlykow¹, Kunifumi Suzuki¹, Yoko Yoshimura¹, Takamasa Hamai¹, Kiwamu Sakuma¹, Kazuhiro Matsuo¹, Kota Takahashi¹, Masamichi Suzuki¹, Masumi Saitoh¹, Reika Ichihara¹ (1. KIOXIA Corporation (Japan))

https://doi.org/10.7567/SSDM.2023.K-1-03

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Presentation information

[K-1] Ferroelectric Devices

[K-1-03] Recovery of Cycling-Induced Degradation of Interfacial SiO 2 in HfO 2-FeFET and its Impact on Retention Characteristics

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[K-1-03] Recovery of Cycling-Induced Degradation of Interfacial SiO ₂ in HfO ₂-FeFET and its Impact on Retention Characteristics