3D Vertical Poly-Si FeFETs Toward Stackable High-Density Non-volatile Memory Applications

Zhao- Feng Lou

doi:https://doi.org/10.7567/SSDM.2023.K-1-04

3:00 PM - 3:15 PM

[K-1-04] 3D Vertical Poly-Si FeFETs Toward Stackable High-Density Non-volatile Memory Applications

^○Zhao- Feng Lou¹, Zhi-Xian Li², Fu-Sheng Chang³, Chen-Ying Lin², Jia-Hong Chen², Zong-Han Li², Cheng-Hong Liu¹, Tim Chen⁴, Min-Hung Lee¹ (1. Graduate School of Advance Tech., National Taiwan Univ. (Taiwan), 2. Inst. and Undergraduate Program of Electro-Optical Eng., National Taiwan Normal Univ. (Taiwan), 3. Graduate Inst. of Electronics Eng., National Taiwan Univ. (Taiwan), 4. AUCMOS Tech. (United States of America))

https://doi.org/10.7567/SSDM.2023.K-1-04

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Presentation information

[K-1] Ferroelectric Devices

[K-1-04] 3D Vertical Poly-Si FeFETs Toward Stackable High-Density Non-volatile Memory Applications

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