Influence of Strain on Multilayer Ge Nanodot Formation on SiGe Virtual Substrate

Wei-Chen Wen

doi:https://doi.org/10.7567/SSDM.2023.M-3-02

講演情報

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[M-3] Group IV Materials I

2023年9月7日(木) 09:00 〜 10:30 Room M (431, Bldg. 4)

Session Chairs: Katsunori Makihara (Nagoya Univ.), Yosuke Shimura (imec)

09:30 〜 09:45

[M-3-02] Influence of Strain on Multilayer Ge Nanodot Formation on SiGe Virtual Substrate

^○Wei-Chen Wen¹, Bernd Tillack^1,2, Yuji Yamamoto¹ (1. IHP - Leibniz-Institut für innovative Mikroelektronik (Germany), 2. Technische Universität Berlin (Germany))

https://doi.org/10.7567/SSDM.2023.M-3-02

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講演情報

[M-3] Group IV Materials I

[M-3-02] Influence of Strain on Multilayer Ge Nanodot Formation on SiGe Virtual Substrate

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