Optical Material Properties of Epitaxial SiGe/Si Multi-Layers Used for Complementary FET Devices

Roger Loo

doi:https://doi.org/10.7567/SSDM.2023.M-3-05

10:15 AM - 10:30 AM

[M-3-05 (Late News)] Optical Material Properties of Epitaxial SiGe/Si Multi-Layers Used for Complementary FET Devices

^○Roger Loo¹, Andriy Hikavyy¹, Dong Wang², Keisuke Yamamoto², Tamás Sipőcz3³, Árpád Kerekes³, Anjani Akula¹, Yosuke Shimura¹ (1. Imec (Belgium), 2. Kyushu Univ (Japan), 3. Semilab Semiconductor Physics Lab. Corp. (Hungary))

https://doi.org/10.7567/SSDM.2023.M-3-05

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Presentation information

[M-3] Group IV Materials I

[M-3-05 (Late News)] Optical Material Properties of Epitaxial SiGe/Si Multi-Layers Used for Complementary FET Devices

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