High-Quality Ge Epitaxial Film Based on Dislocation Trapping Mechanism in Patterned Si Substrate

MOHD FAIZ BIN AMIN

doi:https://doi.org/10.7567/SSDM.2023.M-4-02

Presentation information

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[M-4] Group IV Materials II

Thu. Sep 7, 2023 10:45 AM - 12:00 PM Room M (431, Bldg. 4)

Session Chairs: Akira Heya (Univ. of Hyogo), Taizoh Sadoh (Kyushu Univ.)

11:00 AM - 11:15 AM

[M-4-02] High-Quality Ge Epitaxial Film Based on Dislocation Trapping Mechanism in Patterned Si Substrate

^○MOHD FAIZ BIN AMIN¹, Jose A. Piedra-Lorenzana¹, Keisuke Yamane¹, Takeshi Hizawa¹, Tetsuya Nakai², Yasuhiko Ishikawa¹ (1. Toyohashi Univ. of Tech. (Japan), 2. SUMCO Corp. (Japan))

https://doi.org/10.7567/SSDM.2023.M-4-02

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Presentation information

[M-4] Group IV Materials II

[M-4-02] High-Quality Ge Epitaxial Film Based on Dislocation Trapping Mechanism in Patterned Si Substrate

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