Giant thermoelectric power of n-type Si 1− xSn x layers grown on FZ-Si(001) substrates

Tatsuki Oiwa

doi:https://doi.org/10.7567/SSDM.2023.M-4-05

講演情報

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[M-4] Group IV Materials II

2023年9月7日(木) 10:45 〜 12:00 Room M (431, Bldg. 4)

Session Chairs: Akira Heya (Univ. of Hyogo), Taizoh Sadoh (Kyushu Univ.)

11:45 〜 12:00

[M-4-05] Giant thermoelectric power of n-type Si ₁₋ _xSn _x layers grown on FZ-Si(001) substrates

^○Tatsuki Oiwa¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Takayoshi Katase², Masashi Kurosawa¹ (1. Nagoya Univ. (Japan), 2. Tokyo Tech. (Japan))

https://doi.org/10.7567/SSDM.2023.M-4-05

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講演情報

[M-4] Group IV Materials II

[M-4-05] Giant thermoelectric power of n-type Si 1− xSn x layers grown on FZ-Si(001) substrates

パスワード

[M-4-05] Giant thermoelectric power of n-type Si ₁₋ _xSn _x layers grown on FZ-Si(001) substrates