Supression of Threshold Voltage Instability due to Positive Bias Stress in GaN Planer MOSFETs by Post-Deposition Anneal

Yuki Ichikawa

doi:https://doi.org/10.7567/SSDM.2023.N-1-03

Presentation information

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-1] GaN-based Power Devices

Wed. Sep 6, 2023 2:00 PM - 3:30 PM Room N (432, Bldg. 4)

Session Chairs: Toru Sugiyama (Toshiba Device & Strage Corporation), Heiji Watanabe (Osaka Univ.)

2:45 PM - 3:00 PM

[N-1-03] Supression of Threshold Voltage Instability due to Positive Bias Stress in GaN Planer MOSFETs by Post-Deposition Anneal

^○Yuki Ichikawa¹, Katsunori Ueno², Tsurugi Kondo², Ryo Tanaka², Shinya Takashima², Jun Suda¹ (1. Univ. of Nagoya (Japan), 2. Corp. of Fuji Electric (Japan))

https://doi.org/10.7567/SSDM.2023.N-1-03

Abstract password authentication.
PA password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

Presentation information

[N-1] GaN-based Power Devices

[N-1-03] Supression of Threshold Voltage Instability due to Positive Bias Stress in GaN Planer MOSFETs by Post-Deposition Anneal

Password