Mobility enhancement in GaN-MOSFETs by surface Al doping

Katsunori Ueno

doi:https://doi.org/10.7567/SSDM.2023.N-1-02

Presentation information

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-1] GaN-based Power Devices

Wed. Sep 6, 2023 2:00 PM - 3:30 PM Room N (432, Bldg. 4)

Session Chairs: Toru Sugiyama (Toshiba Device & Strage Corporation), Heiji Watanabe (Osaka Univ.)

2:30 PM - 2:45 PM

[N-1-02] Mobility enhancement in GaN-MOSFETs by surface Al doping

^○Katsunori Ueno¹, Turugi Kondo¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Tomoyuki Suwa² (1. Fuji Electric Co., Ltd. (Japan), 2. Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.N-1-02

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Presentation information

[N-1] GaN-based Power Devices

[N-1-02] Mobility enhancement in GaN-MOSFETs by surface Al doping

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