Grid-Patterned Trench IGBT for 1.2kV HEV/PHEV Silicon Power Devices

Satoru Machida

doi:https://doi.org/10.7567/SSDM.2023.N-4-01

Presentation information

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-4] Si-based Power Devices

Thu. Sep 7, 2023 10:45 AM - 12:00 PM Room N (432, Bldg. 4)

Session Chairs: Tetsuya Nitta (Mitsubishi Electric Corporation), Yuichi Onozawa (Fuji Electric Corporation)

10:45 AM - 11:00 AM

[N-4-01] Grid-Patterned Trench IGBT for 1.2kV HEV/PHEV Silicon Power Devices

^○Satoru Machida¹, Yusuke Yamashita¹, Jun Saito², Masaru Senoo³ (1. Toyota Central R&D Labs. Inc. (Japan), 2. MIRISE Tech. Corp. (Japan), 3. DENSO Corp. (Japan))

https://doi.org/10.7567/SSDM.2023.N-4-01

Abstract password authentication.
PA password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

Presentation information

[N-4] Si-based Power Devices

[N-4-01] Grid-Patterned Trench IGBT for 1.2kV HEV/PHEV Silicon Power Devices

Password