The Influence of Boron Concentration on the Reduction of SiO <sub>2</sub>/4H-SiC MOS Interface Defect Density with Preserved Flatband Voltage Stability

Runze Wang

doi:https://doi.org/10.7567/SSDM.2023.N-5-05

講演情報

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-5] SiC MOS interfaces

2023年9月8日(金) 09:00 〜 10:15 Room N (432, Bldg. 4)

Session Chairs: Heiji Watanabe (Osaka Univ.), Tarou Nishiguchi (Sumitomo Electric Industries, Ltd.)

10:00 〜 10:15

[N-5-05] The Influence of Boron Concentration on the Reduction of SiO ₂/4H-SiC MOS Interface Defect Density with Preserved Flatband Voltage Stability

^○Runze Wang¹, Munetaka Noguchi², Hiroshi Watanabe², Koji Kita¹ (1. Univ. of Tokyo (Japan), 2. Mitsubishi Electric Corp. (Japan))

https://doi.org/10.7567/SSDM.2023.N-5-05

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講演情報

[N-5] SiC MOS interfaces

[N-5-05] The Influence of Boron Concentration on the Reduction of SiO 2/4H-SiC MOS Interface Defect Density with Preserved Flatband Voltage Stability

パスワード

[N-5-05] The Influence of Boron Concentration on the Reduction of SiO ₂/4H-SiC MOS Interface Defect Density with Preserved Flatband Voltage Stability