2023 International Conference on Solid State Devices and Materials

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Oral Presentation

04: Power / High‐speed Devices and Materials

[N-6] Diamond-based Devices

Fri. Sep 8, 2023 10:45 AM - 11:45 AM Room N (432, Bldg. 4)

Session Chairs: Satoshi Yamasaki (Kanazawa Univ.), Shinsuke Harada (National Institute of Advanced Industrial Science and Technology)

11:15 AM - 11:30 AM

[N-6-02] Normally-Off Operation in Vertical Diamond MOSFETs Using Oxidized Si Termination Diamond Channel Formed by Si Molecular Beam Deposition Approaches

○Kento Narita1, Kosuke Ota1, Yu Fu1, Chiyuki Wakabayashi1, Atushi Hiraiwa1, Hiroshi Kawarada1,2 (1. School of Fundamental Science & Engineering Waseda Univ. (Japan), 2. The Kagami Memorial Research Inst. for Materials Science and Technology (Japan))

https://doi.org/10.7567/SSDM.2023.N-6-02

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