High Performance Ga <sub>2</sub>O <sub>3</sub> Schottky Barrier Diode with Patterned Mg-CBL Rings Fabricated using a Damage-Free Doping Technique

Mujun Li

doi:https://doi.org/10.7567/SSDM.2023.N-7-03

Presentation information

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-7] Ga2O3-based Devices

Fri. Sep 8, 2023 1:30 PM - 3:00 PM Room N (432, Bldg. 4)

Session Chairs: Yongzhao Yao (Japan Fine Ceramics Center), Joel T. Asubar (Univ. of Fukui)

2:15 PM - 2:30 PM

[N-7-03] High Performance Ga ₂O ₃ Schottky Barrier Diode with Patterned Mg-CBL Rings Fabricated using a Damage-Free Doping Technique

^○Mujun Li¹, Minghao He^2,1, Xiaohui Wang¹, Qing Wang¹, Kah-Wee Ang², Hongyu Yu¹ (1. Southern Univ. of Sci. and Tech. (China), 2. National Univ. of Singapore (Singapore))

https://doi.org/10.7567/SSDM.2023.N-7-03

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Presentation information

[N-7] Ga2O3-based Devices

[N-7-03] High Performance Ga 2O 3 Schottky Barrier Diode with Patterned Mg-CBL Rings Fabricated using a Damage-Free Doping Technique

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[N-7-03] High Performance Ga ₂O ₃ Schottky Barrier Diode with Patterned Mg-CBL Rings Fabricated using a Damage-Free Doping Technique