High Performance Ga <sub>2</sub>O <sub>3</sub> Schottky Barrier Diode with Patterned Mg-CBL Rings Fabricated using a Damage-Free Doping Technique

Mujun Li

doi:https://doi.org/10.7567/SSDM.2023.N-7-03

14:15 〜 14:30

[N-7-03] High Performance Ga ₂O ₃ Schottky Barrier Diode with Patterned Mg-CBL Rings Fabricated using a Damage-Free Doping Technique

^○Mujun Li¹, Minghao He^2,1, Xiaohui Wang¹, Qing Wang¹, Kah-Wee Ang², Hongyu Yu¹ (1. Southern Univ. of Sci. and Tech. (China), 2. National Univ. of Singapore (Singapore))

https://doi.org/10.7567/SSDM.2023.N-7-03

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講演情報

[N-7] Ga2O3-based Devices

[N-7-03] High Performance Ga ₂O ₃ Schottky Barrier Diode with Patterned Mg-CBL Rings Fabricated using a Damage-Free Doping Technique

パスワード

講演情報

[N-7] Ga2O3-based Devices

[N-7-03] High Performance Ga 2O 3 Schottky Barrier Diode with Patterned Mg-CBL Rings Fabricated using a Damage-Free Doping Technique

パスワード

[N-7-03] High Performance Ga ₂O ₃ Schottky Barrier Diode with Patterned Mg-CBL Rings Fabricated using a Damage-Free Doping Technique