Fabrication of HfO<sub>2</sub> dielectric with κ-value exceeding 30 at room temperature

Mochamad Januar

doi:https://doi.org/10.7567/SSDM.2023.PS-10-03

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Poster Session

10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[PS-10] 10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

Thu. Sep 7, 2023 3:00 PM - 5:00 PM Shirotori Hall (Nagoya Congress Center)

[PS-10-03] Fabrication of HfO₂ dielectric with κ-value exceeding 30 at room temperature

Mochamad Januar¹, Chun-Yen Li¹, ^○Kou-Chen Liu^1,2,3 (1. Chang Gung University (Taiwan), 2. Chang Gung Memorial Hospital (Taiwan), 3. Ming Chi University of Technology (Taiwan))

https://doi.org/10.7567/SSDM.2023.PS-10-03

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Presentation information

[PS-10] 10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[PS-10-03] Fabrication of HfO2 dielectric with κ-value exceeding 30 at room temperature

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[PS-10-03] Fabrication of HfO₂ dielectric with κ-value exceeding 30 at room temperature