A 4H-SiC p-channel IGBT with Higher Breakdown Voltage and Superior VF·Crss FOM

Erjun Wang

doi:https://doi.org/10.7567/SSDM.2023.PS-4-03

[PS-4-03] A 4H-SiC p-channel IGBT with Higher Breakdown Voltage and Superior VF·Crss FOM

Erjun Wang^1,2, Xiaoli Tian¹, ^○Wei Wei^1,2, Yun Bai¹, Jilong Hao¹, Chengyue Yang¹, Yidan Tang¹, Xinyu Liu¹ (1. Inst. of Microelectronics of the Chinese Academy of Sci. (China), 2. the Chinese Academy of Sci. (China))

https://doi.org/10.7567/SSDM.2023.PS-4-03

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Presentation information

[PS-4] 04: Power / High‐speed Devices and Materials

[PS-4-03] A 4H-SiC p-channel IGBT with Higher Breakdown Voltage and Superior VF·Crss FOM

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