Engineering Oxidation State in Interfacial Layer of Ge nMOSFET with Ozone and Hydrogen Plasma Treatments on Ge

Cheng-Hsueh Wu

講演情報

Short Oral Presentation

01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[SO-PS-01] 01: Advanced CMOS: Material Science / Process Engineering / Device Technology

2023年9月7日(木) 13:30 〜 14:00 Room F (224, Bldg. 2)

Session Chairs: Hidetoshi Oishi (Sony Semiconductor Solutions Corp.), Keisuke Yamamoto (Kyushu Univ)

13:52 〜 13:54

[SO-PS-01-12] Engineering Oxidation State in Interfacial Layer of Ge nMOSFET with Ozone and Hydrogen Plasma Treatments on Ge

^○Cheng-Hsueh Wu¹, Kuei-Shu Chang-Liao¹, Dun-Bao Ruan² (1. National Tsing Hua University (Taiwan), 2. Fuzhou University (China))

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講演情報

[SO-PS-01] 01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[SO-PS-01-12] Engineering Oxidation State in Interfacial Layer of Ge nMOSFET with Ozone and Hydrogen Plasma Treatments on Ge

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