2023 International Conference on Solid State Devices and Materials

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Short Oral Presentation

04: Power / High‐speed Devices and Materials

[SO-PS-04] 04: Power / High‐speed Devices and Materials

Thu. Sep 7, 2023 1:30 PM - 2:04 PM Room N (432, Bldg. 4)

Session Chairs: Heiji Watanabe (Osaka Univ.), Taketomo Sato (Hokkaido Univ.)

1:34 PM - 1:36 PM

[SO-PS-04-03] A 4H-SiC p-channel IGBT with Higher Breakdown Voltage and Superior VF·Crss FOM

Erjun Wang1,2, Xiaoli Tian1, ○Wei Wei1,2, Yun Bai1, Jilong Hao1, Chengyue Yang1, Yidan Tang1, Xinyu Liu1 (1. Inst. of Microelectronics of the Chinese Academy of Sci. (China), 2. the Chinese Academy of Sci. (China))

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