Recombination coefficients for 3C- and 6H-SiC to analyze carrier recombination at stacking faults in 4H-SiC

Kazuhiro “-” TANAKA

Presentation information

Short Oral Presentation

04: Power / High‐speed Devices and Materials

[SO-PS-04] 04: Power / High‐speed Devices and Materials

Thu. Sep 7, 2023 1:30 PM - 2:04 PM Room N (432, Bldg. 4)

Session Chairs: Heiji Watanabe (Osaka Univ.), Taketomo Sato (Hokkaido Univ.)

1:36 PM - 1:38 PM

[SO-PS-04-04] Recombination coefficients for 3C- and 6H-SiC to analyze carrier recombination at stacking faults in 4H-SiC

^○Kazuhiro “-” TANAKA¹, Masashi “-” KATO¹ (1. Nagoya Institute Technology (Japan))

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Presentation information

[SO-PS-04] 04: Power / High‐speed Devices and Materials

[SO-PS-04-04] Recombination coefficients for 3C- and 6H-SiC to analyze carrier recombination at stacking faults in 4H-SiC

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