Fabrication of HfO<sub>2</sub> dielectric with κ-value exceeding 30 at room temperature

Mochamad Januar

Presentation information

Short Oral Presentation

10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[SO-PS-10] 10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

Thu. Sep 7, 2023 1:30 PM - 1:50 PM Room E (223, Bldg. 2)

Session Chairs: Kaoru Toko (Univ. of Tsukuba), Ryo Matsumura (NIMS)

1:34 PM - 1:36 PM

[SO-PS-10-03] Fabrication of HfO₂ dielectric with κ-value exceeding 30 at room temperature

Mochamad Januar¹, Chun-Yen Li¹, ^○Kou-Chen Liu^1,2,3 (1. Chang Gung University (Taiwan), 2. Chang Gung Memorial Hospital (Taiwan), 3. Ming Chi University of Technology (Taiwan))

Abstract password authentication.
PA password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

Presentation information

[SO-PS-10] 10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[SO-PS-10-03] Fabrication of HfO2 dielectric with κ-value exceeding 30 at room temperature

Password

[SO-PS-10-03] Fabrication of HfO₂ dielectric with κ-value exceeding 30 at room temperature