Effect of Bilayer High-kAl2O3 and HfO2 Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors

Dian Budiarti Kastian

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Short Oral Presentation

10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[SO-PS-10] 10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

Thu. Sep 7, 2023 1:30 PM - 1:50 PM Room E (223, Bldg. 2)

Session Chairs: Kaoru Toko (Univ. of Tsukuba), Ryo Matsumura (NIMS)

1:36 PM - 1:38 PM

[SO-PS-10-04] Effect of Bilayer High-kAl₂O₃ and HfO₂ Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors

^○Dian Budiarti Kastian¹, Juan Paolo Bermundo¹, Yukiharu Uraoka¹ (1. Nara Inst. of Sci. and Tech. (Japan))

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Presentation information

[SO-PS-10] 10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[SO-PS-10-04] Effect of Bilayer High-kAl2O3 and HfO2 Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors

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[SO-PS-10-04] Effect of Bilayer High-kAl₂O₃ and HfO₂ Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors