Fabrication of HfO<sub>2</sub> dielectric with κ-value exceeding 30 at room temperature

Mochamad Januar

講演情報

Short Oral Presentation

10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[SO-PS-10] 10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

2023年9月7日(木) 13:30 〜 13:50 Room E (223, Bldg. 2)

Session Chairs: Kaoru Toko (Univ. of Tsukuba), Ryo Matsumura (NIMS)

13:34 〜 13:36

[SO-PS-10-03] Fabrication of HfO₂ dielectric with κ-value exceeding 30 at room temperature

Mochamad Januar¹, Chun-Yen Li¹, ^○Kou-Chen Liu^1,2,3 (1. Chang Gung University (Taiwan), 2. Chang Gung Memorial Hospital (Taiwan), 3. Ming Chi University of Technology (Taiwan))

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講演情報

[SO-PS-10] 10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[SO-PS-10-03] Fabrication of HfO2 dielectric with κ-value exceeding 30 at room temperature

パスワード

[SO-PS-10-03] Fabrication of HfO₂ dielectric with κ-value exceeding 30 at room temperature