Improving Performances of Oxide Phototransistors Using a Mechano-Chemically Treated Porous Structure as The Visible Light Absorption Layer

I Sak Lee

doi:https://doi.org/10.36463/idw.2019.0447

10:05 AM - 10:20 AM

[AMD4-5L] Improving Performances of Oxide Phototransistors Using a Mechano-Chemically Treated Porous Structure as The Visible Light Absorption Layer

*I Sak Lee¹, Bennet Nii Akwei Brown², Dongwoo Kim¹, Sujin Jung¹, Byung Ha Kang¹, Hyun Jae Kim¹ (1. Yonsei University (Korea), 2. Columbia University (United States of America))

Oxide TFT, Photosensor, Visible light, Mechano-chemical treatment

https://doi.org/10.36463/idw.2019.0447

In this research, we suggest indium gallium zinc oxide (IGZO) thin film transistors (TFTs) for detection of visible light using a porous oxide layer (POL) resulting from mechano-chemical treatment. When compared with conventional IGZO TFT, the IGZO TFT with the POL exhibits photoresponsivity of 341.32 A/W, photosensitivity of 1.10ⅹ10⁶, and detectivity of 4.54ⅹ10¹⁰Jones under 532 nm light illumination.

Proceedings of the International Display Workshops Volume 26 (IDW '19)

[AMD4-5L] Improving Performances of Oxide Phototransistors Using a Mechano-Chemically Treated Porous Structure as The Visible Light Absorption Layer