International Display Workshops General Incorporated Association

10:05 〜 10:20

[AMD4-5L] Improving Performances of Oxide Phototransistors Using a Mechano-Chemically Treated Porous Structure as The Visible Light Absorption Layer

*I Sak Lee1, Bennet Nii Akwei Brown2, Dongwoo Kim1, Sujin Jung1, Byung Ha Kang1, Hyun Jae Kim1 (1. Yonsei University (Korea), 2. Columbia University (United States of America))

Oxide TFT, Photosensor, Visible light, Mechano-chemical treatment

https://doi.org/10.36463/idw.2019.0447

In this research, we suggest indium gallium zinc oxide (IGZO) thin film transistors (TFTs) for detection of visible light using a porous oxide layer (POL) resulting from mechano-chemical treatment. When compared with conventional IGZO TFT, the IGZO TFT with the POL exhibits photoresponsivity of 341.32 A/W, photosensitivity of 1.10ⅹ106, and detectivity of 4.54ⅹ1010 Jones under 532 nm light illumination.