International Display Workshops Incorporated Association

9:25 AM - 9:50 AM

[AMD5-2(Invited)] High Mobility Metal-Oxide Devices for Display SoP and 3D Brain-Mimicking IC

*Albert Chin1, Te Jui Yen1, Cheng Wei Shih1, You-Da Chen1 (1. National Chiao Tung University (Taiwan))

metal-oxide transistor, monolithic 3D integration, 3D brain-mimicking IC architecture

Owing to fast technology evolution, the n-type SnO2 thin-film transistor (TFT) can reach high mobility of 238 cm2/Vs and p-type SnO TFT has high hole mobility of 7.6 cm2/Vs. These high mobility complementary TFTs is the enabling technology for display system-on-panel and the ultra-fast three-dimensional brain-mimicking IC.