11:55 AM - 12:15 PM

[AMD6-4] Fabrication of Top-Gate Self-Aligned Amorphous InGaSnO TFTs with High Mobility

*Nian Liu¹, Huafei Xie², Xueru Mei¹, Macai Lu¹, Lei Wen¹, Shujhih Chen¹, Shengdong Zhang², Chiayu Lee¹, Xin Zhang¹ (1. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co.Ltd., China (China), 2. School of Electronic and Computer Engineering, Peking University, Shenzhen, China (China))

IGTO, High Mobility, Deposition Condition, top-gate self-aligned

https://doi.org/10.36463/idw.2019.0476