Fabrication of Top-Gate Self-Aligned Amorphous InGaSnO TFTs with High Mobility

Nian Liu

doi:https://doi.org/10.36463/idw.2019.0476

11:55 〜 12:15

[AMD6-4] Fabrication of Top-Gate Self-Aligned Amorphous InGaSnO TFTs with High Mobility

*Nian Liu¹, Huafei Xie², Xueru Mei¹, Macai Lu¹, Lei Wen¹, Shujhih Chen¹, Shengdong Zhang², Chiayu Lee¹, Xin Zhang¹ (1. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co.Ltd., China (China), 2. School of Electronic and Computer Engineering, Peking University, Shenzhen, China (China))

IGTO, High Mobility, Deposition Condition, top-gate self-aligned

https://doi.org/10.36463/idw.2019.0476

The effect of deposition condition of dielectric layer on top-gate self-aligned amorphous InGaSnO TFT have been discussed, higher N₂O/SiH₄gas ratio and medium power are better. The resulting a-IGTO TFT at Gen.4.5 glass exhibited good uniformity and high mobility of 28.57cm²/Vs, sweep swing of 0.27 V/decade, threshold voltage of 0.53V

Proceedings of the International Display Workshops Volume 26 (IDW '19)

[AMD6-4] Fabrication of Top-Gate Self-Aligned Amorphous InGaSnO TFTs with High Mobility