Investigation of Hump Phenomenon in a-IGZO Thin-Film Transistors under Positive Bias Stress

Xinlv Duan

doi:https://doi.org/10.36463/idw.2019.0534

10:40 〜 13:10

[AMDp1-11] Investigation of Hump Phenomenon in a-IGZO Thin-Film Transistors under Positive Bias Stress

*Xinlv Duan¹ (1. Institute of Microelectronics of the Chinses Academy of Sciences (China))

a-IGZO TFT, positive bias stress, hump phenomenon, parasitic channel

https://doi.org/10.36463/idw.2019.0534

The hump phenomenon in InGaZnO thin-film transistors (IGZO TFTs) under positive bias stress (PBS) has been investigated by varying channel width and extended length. The results show that the parasitic channel is located at the edge area of the active region along the spreading current direction.

Proceedings of the International Display Workshops Volume 26 (IDW '19)

[AMDp1-11] Investigation of Hump Phenomenon in a-IGZO Thin-Film Transistors under Positive Bias Stress