Effect of Ambient Atmosphere on Abnormal Degradation Behavior in Metal-Oxide Thin-Film Transistor under Positive Gate-Bias and Temperature Stress

JIAPENG LI

doi:https://doi.org/10.36463/idw.2019.0551

10:40 AM - 1:10 PM

[AMDp1-17] Effect of Ambient Atmosphere on Abnormal Degradation Behavior in Metal-Oxide Thin-Film Transistor under Positive Gate-Bias and Temperature Stress

*JIAPENG LI¹, Lei Lu², Zhihe Xia¹, Sisi Wang¹, Zhichao Zhou¹, Runxiao Shi¹, Hoi-Sing Kwok^3,1, Man Wong¹ (1. The Hong Kong University of Science and Technology (Hong Kong), 2. Peking Univeristy (China), 3. Jockey Club Institute for Advanced Study (Hong Kong))

Metal-oxide, Thin-Film Transistor, PBTS, Ambient Effect

https://doi.org/10.36463/idw.2019.0551

Positive gate-bias and temperature stress were performed on the respective metal-oxide thin-film transistors as fabricated and stored in air ambiance for three months. An abnormal negative shift of the transfer characteristics was observed, and a channel width-dependence of device degradation occurred after long-term storing.

Proceedings of the International Display Workshops Volume 26 (IDW '19)

[AMDp1-17] Effect of Ambient Atmosphere on Abnormal Degradation Behavior in Metal-Oxide Thin-Film Transistor under Positive Gate-Bias and Temperature Stress