E/E Inverter Using Four-Terminal Poly-Ge<sub>x</sub>Sn<sub>1-x </sub>TFTs on Glass

Ryo Miyazaki

doi:https://doi.org/10.36463/idw.2019.0624

14:30 〜 17:00

[AMDp2-14L] E/E Inverter Using Four-Terminal Poly-Ge_xSn_1-xTFTs on Glass

*Ryo Miyazaki¹, Akito Hara¹ (1. Tohoku Gakuin University (Japan))

TFT, 4T, poly-GeSn, Cu-MIC, E/E inverter

https://doi.org/10.36463/idw.2019.0624

We demonstrated an E/E inverter using polycrystalline germanium-tin (poly-Ge_xSn_1-x) thin-film transistors (TFTs) fabricated via metal-induced crystallization (MIC) using Cu. The TFTs in the E/E inverter comprises a planar four-terminal (4T) structure, in which the TFTs were enabled to be normally-off by the control gate voltage (V_CG). The inverter performance was varied by changing V_CG.

Proceedings of the International Display Workshops Volume 26 (IDW '19)

[AMDp2-14L] E/E Inverter Using Four-Terminal Poly-GexSn1-x TFTs on Glass

[AMDp2-14L] E/E Inverter Using Four-Terminal Poly-Ge_xSn_1-xTFTs on Glass