Polysilicon CMOS TFTs on Ultrathin and Flexible Stainless Steel Substrates

Miki Trifunovic

doi:https://doi.org/10.36463/idw.2019.1606

11:55 〜 12:15

[FLX4-4] Polysilicon CMOS TFTs on Ultrathin and Flexible Stainless Steel Substrates

*Miki Trifunovic¹, Aditi Chandra¹, Mao Ito¹, Sarah Khoo¹, Arvind Kamath¹ (1. Thin Film Electronics Inc. (United States of America))

Polysilicon TFT, CMOS, Ultrathin, Flexible, Stainless Steel

https://doi.org/10.36463/idw.2019.1606

CMOS polysilicon TFTs fabricated on flexible stainless steel substrates are thinned down to 5 µm thickness. Bending tests show minimal change in TFT performance at 2.5 mm bending radius after 10,000 tensile bend cycles.

Proceedings of the International Display Workshops Volume 26 (IDW '19)

[FLX4-4] Polysilicon CMOS TFTs on Ultrathin and Flexible Stainless Steel Substrates