Effects of Annealing Gas on Electrical Properties of La<sub>2</sub>O<sub>3</sub> Gate Dielectrics

10:40 AM - 1:10 PM

[FMCp3-8] Effects of Annealing Gas on Electrical Properties of La₂O₃ Gate Dielectrics

*Minjun Song¹, Byoungdeog Choi¹ (1. University of Sungkyunkwan (Korea))

MOS-Cs, high-k dielectric, La2O3, oxygen annealing, interface trap density

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