International Display Workshops Incorporated Association

10:40 AM - 1:10 PM

[FMCp3-9] Reduction of Oxide Defects in ZrO2/Al2O3/ZrO2 Dielectrics by Incorporating Hydrogen Peroxide

*Gaeun Lee1, Byoungdeog Choi1 (1. Sungkyunkwan University (Korea))

high-k, ZrO2, Al2O3, Hydrogen peroxide, solution process

Capacitance- and current-voltage characteristics of ZrO2/Al2O3/ZrO2 (ZAZ) capacitors with an addition of hydrogen peroxide (H2O2) were identified. From the results, leakage current and interface trap density of the H2O2-doped devices decreased due to reduction of oxygen vacancies in ZAZ layers. H2O2 effect on the electrical behaviors was qualitatively analyzed.