Current Status on the n/p type oxide semiconductor materials and the associated devices using Atomic Layer Deposition.

Jin-Seong Park

doi:https://doi.org/10.36463/idw.2020.0137

10:40 AM - 11:05 AM

[AMD1-1(Invited)] Current Status on the n/p type oxide semiconductor materials and the associated devices using Atomic Layer Deposition.

*Jin-Seong Park¹, TaeHyun Hong¹, Wanho Choi¹, Kyungrok Kim¹, Hyemi Kim¹, Su Hwan Choi¹ (1. Hanyang Univ. (Korea))

Atomic Layer Deposition, Oxide Semiconductor, Thin Film Transistor, n-type, p-type

https://doi.org/10.36463/idw.2020.0137

Atomic Layer Deposition (ALD) has been introduced for oxide semiconductor synthesis and device applications. Interestingly, ALD enables to deposit not only high-performance oxide semiconductor (a-IGZO, etc.) but also p-type oxide semiconductors (CuO and SnO) at low deposition temperature. It will have great potential to solve the current material and device issues. ALD will be the emerging thin-film process in the coming display application.

Proceedings of the International Display Workshops Volume 27 (IDW '20)

[AMD1-1(Invited)] Current Status on the n/p type oxide semiconductor materials and the associated devices using Atomic Layer Deposition.