International Display Workshops General Incorporated Association

Proceedings of the International Display Workshops Volume 27 (IDW '20)

Proceedings of the International Display Workshops Volume 27 (IDW '20)

2020年12月9日 〜 2020年12月11日
Virtual Conference

16:10 〜 18:10

[AMDp1-2] Hydrogen-Treated Stable IGZO Thin-Film Transistor with All-Sputtered Gate Stack

*Taewon Seo1, Juyoung Yun1, Suwon Seong1, Hyuk Park1, Gilsu Jeon1, Yoongyoung Chung1 (1. Pohang University of Science and Technology(Korea))

IGZO TFT, hydrogen plasma, interface, stability

https://doi.org/10.36463/idw.2020.0209

a-IGZO contains numerous defects, which degrade the performance and stability of thin-film transistors. Especially, the interface taps have dominant effects on the device properties, such as hysteresis and carrier scattering. We demonstrated highly-stable a-IGZO TFT with all-sputtered gate stack. Outstanding interface properties were obtained by passivation with hydrogen plasma treatment.