4:10 PM - 6:10 PM
[AMDp1-2] Hydrogen-Treated Stable IGZO Thin-Film Transistor with All-Sputtered Gate Stack
IGZO TFT, hydrogen plasma, interface, stability
a-IGZO contains numerous defects, which degrade the performance and stability of thin-film transistors. Especially, the interface taps have dominant effects on the device properties, such as hysteresis and carrier scattering. We demonstrated highly-stable a-IGZO TFT with all-sputtered gate stack. Outstanding interface properties were obtained by passivation with hydrogen plasma treatment.