International Display Workshops General Incorporated Association

14:35 〜 14:50

[FLX1-4L] Organic Floating-Gate Transistors with Hole Trapping Characteristics for NAND-Like Memory Operation

Miho Higashinakaya1, *Takashi Nagase1,2, Reitaro Hattori1, Shion Tazuhara1, Takashi Kobayashi1,2, Hiroyoshi Naito1,2 (1. Osaka Prefecture University(Japan), 2. The Research Institute for Molecular Electronic Devices(Japan))

Organic transistor memory, Organic floating gate, Ambipolar semiconductor, NAND-like memory operation

https://doi.org/10.36463/idw.2020.0882

Solution-processable organic floating-gate transistor memories programmable in the dark have been developed using ambipolar polymer semiconductor. Solution-processed organic transistor memories allow the storage of holes as well as electrons by tuning the work function of gate electrodes. We demonstrate NAND-like memory operation using organic transistor memories with hole trapping characteristics.