Organic Floating-Gate Transistors with Hole Trapping Characteristics for NAND-Like Memory Operation

Miho Higashinakaya

doi:https://doi.org/10.36463/idw.2020.0882

14:35 〜 14:50

[FLX1-4L] Organic Floating-Gate Transistors with Hole Trapping Characteristics for NAND-Like Memory Operation

Miho Higashinakaya¹, *Takashi Nagase^1,2, Reitaro Hattori¹, Shion Tazuhara¹, Takashi Kobayashi^1,2, Hiroyoshi Naito^1,2 (1. Osaka Prefecture University(Japan), 2. The Research Institute for Molecular Electronic Devices(Japan))

Organic transistor memory, Organic floating gate, Ambipolar semiconductor, NAND-like memory operation

https://doi.org/10.36463/idw.2020.0882

Solution-processable organic floating-gate transistor memories programmable in the dark have been developed using ambipolar polymer semiconductor. Solution-processed organic transistor memories allow the storage of holes as well as electrons by tuning the work function of gate electrodes. We demonstrate NAND-like memory operation using organic transistor memories with hole trapping characteristics.

Proceedings of the International Display Workshops Volume 27 (IDW '20)

[FLX1-4L] Organic Floating-Gate Transistors with Hole Trapping Characteristics for NAND-Like Memory Operation