Highly Compatible Low Temperature Polycrystalline Silicon Oxide Technology for High-Resolution Display Backplane Applications

Po-Tsun Liu

doi:https://doi.org/10.36463/idw.2021.0123

13:20 〜 13:40

[AMD1-2(Invited)] Highly Compatible Low Temperature Polycrystalline Silicon Oxide Technology for High-Resolution Display Backplane Applications

*Po-Tsun Liu¹、Zhen-Hao Li¹、Tsung-Che Chiang¹、Chun-Hao Tu¹、Yue Kuo² (1.National Yang Ming Chiao Tung University (Taiwan)、2.Texas A&M University (United States of America))

Low Temperature Polysilicon Oxide, Amorphous Oxide TFT, Hybrid Complementary Inverter, Low Temperature Polycrystalline Silicon, Display Backplane Applications

https://doi.org/10.36463/idw.2021.0123

In this work, we demonstrated the hetro-semiconductor TFTs and resultantly the hybrid complementary inverter, composed of high-mobility indium-based amorphous oxide TFT and p-channel poly-Si TFT for TFT display backplane applications. The inverter with a gain of ~11 V/V has been achieved successfully.

Proceedings of the International Display Workshops Volume 28 (IDW '21)

[AMD1-2(Invited)] Highly Compatible Low Temperature Polycrystalline Silicon Oxide Technology for High-Resolution Display Backplane Applications