5291-ppi OLED Display Enabled by Monolithic Integration of C-axis-Aligned Crystalline IGZO FET and Si CMOS

Kiyoshi Kato, Hidetomo  Kobayashi, Hideaki  Shishido, Toshiyuki  Isa, Tomoya  Aoyama, Yasuhiro  Jimbo, Ryota  Hodo, Koji  Kusunoki, Hajime  Kimura, Hitoshi  Kunitake, Shunpei  Yamazaki

doi:https://doi.org/10.36463/idw.2021.0177

4:20 PM - 4:40 PM

[AMD6/AIS8-4L] 5291-ppi OLED Display Enabled by Monolithic Integration of C-axis-Aligned Crystalline IGZO FET and Si CMOS

*Kiyoshi Kato¹, Hidetomo Kobayashi¹, Hideaki Shishido¹, Toshiyuki Isa¹, Tomoya Aoyama¹, Yasuhiro Jimbo¹, Ryota Hodo¹, Koji Kusunoki¹, Hajime Kimura¹, Hitoshi Kunitake¹, Shunpei Yamazaki¹ (1.Semiconductor Energy Laboratory Co., LTD. (Japan))

CAAC-IGZO, OLED, Ultra high definition

https://doi.org/10.36463/idw.2021.0177

For the first time in the world, we have fabricated OLED display that monolithically integrates Si CMOS, oxide semiconductor FETs, and OLED devices. The panel fabricated is a thin-bezel, > 5000 ppi OLED display with drivers embedded in the display area, enabling area savings of up to approximately 40%

Proceedings of the International Display Workshops Volume 28 (IDW '21)

[AMD6/AIS8-4L] 5291-ppi OLED Display Enabled by Monolithic Integration of C-axis-Aligned Crystalline IGZO FET and Si CMOS