5:30 PM - 5:50 PM
[FMC7/AIS9-2] Cu Process Development in 50 inch UHD 120 Hz LCD TVs Integrated GOA Gate Driver Circuit using Halftone Photolithography Four-Mask a-Si TFT Architecture Technology
50UD 120Hz LCD TVs, Four-Mask a-Si TFT, Cu Process
A mechanism of high doped N+ film was used to lower the contact resistance between metal and semiconductor to achieve ohmic contact in 4-mask process. In this article, the improvement mechanism to reduce contact resistance by using high doped N+ layer will be investigated in conjunction with energy level diagram.